Method for manufacturing a solid state image sensing device

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

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438 57, 438 73, 438516, H01L 2100

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active

059769068

ABSTRACT:
A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.

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patent: 4857976 (1989-08-01), Overhauser et al.
patent: 5481124 (1996-01-01), Kozuka et al.
patent: 5627383 (1997-05-01), Cunningham et al.
patent: 5656835 (1997-08-01), Komobuchi

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