Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1997-04-18
1999-10-19
Nguyen, Tuan H.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
29 2501, 29832, 216 6, 427 79, 438171, 438190, 438381, H01L 2120
Patent
active
059682094
ABSTRACT:
Cathode and anode sides of a plurality of solid electrolytic capacitors are connected by simultaneous electric welding. The welding step is effected to connect an anode lead of a lead frame to the anode electrode of a capacitor body and simultaneously connect a cathode lead of the lead frame to the cathode conductor layer of an adjacent capacitor body. The welding electrode for the cathode lead exerts moderate force to the capacitor bodies using a spring function of the capacitor lead. The simultaneous welding for the adjacent capacitor bodies and the moderate force prevent electrical and mechanical damages of the insulator layer of the solid electrolytic capacitors during the welding.
REFERENCES:
patent: 5062025 (1991-10-01), Verhoeven et al.
NEC Corporation
Nguyen Tuan H.
Thompson Craig
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