Method for manufacturing a solar cell from a substrate wafer

Fishing – trapping – and vermin destroying

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136255, 136256, 136261, 437944, 437974, 437981, 2041293, 20412955, 257466, H01L 3118

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053066472

ABSTRACT:
A self-supporting layer of n-doped monocrystalline silicon is stripped from a substrate wafer of n-doped, monocrystalline silicon by electrochemical etching for manufacturing a solar cell. Holes are formed in the substrate wafer by electrochemical etching, particularly in a fluoride-containing, acidic electrolyte wherein the substrate wafer is connected as an anode. When a depth of the holes that essentially corresponds to the thickness of the self-supporting layer is reached, the process parameters of the etching are modified such that the self-supporting layer is stripped as a consequence of the holes growing together. The solar cell is manufactured from the self-supporting layer, and the method can be applied repeatedly on the same substrate wafer for stripping a plurality of self-supporting layers.

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Werner, "Solarzellen mit Silizium aus der Flussigphasenepitaxie Devices", 1991, pp. 1076 and 1077.

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