Method for manufacturing a SOI-type semiconductor structure

Details Method for manufacturing a SOI-type semiconductor structure Method for manufacturing a SOI-type semiconductor structure

1997-05-27

2000-03-07

Fourson, George

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438459, 438977, 349187, H01L 213063

Patent

active

06033925&

ABSTRACT:
The present invention relates to a method for manufacturing a semiconductor wafer having a SOI wafer-like structure which is prepared on a silicon substrate by electrochemical etching, and an active-driven liquid crystal display employing the semiconductor wafer as a pixel switching wafer. In accordance with the method for manufacturing the SOI-type semiconductor wafer, a wafer having a good electrical insulation property, low leakage current and small parasitic capacity, like a SOI wafer, can be prepared, by employing a silicon substrate which is cheaper than the SOI substrate.

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