Method for manufacturing a silicon layer having increased surfac

Details Method for manufacturing a silicon layer having increased surfac Method for manufacturing a silicon layer having increased surfac

1993-05-14

1994-07-26

Thomas, Tom

Fishing, trapping, and vermin destroying

437197, 437198, 437199, 437 60, 148DIG14, H01L 21469

Patent

active

053326962

ABSTRACT:
The invention relates to a process for increasing the surface area of a silicon layer for a charge storage electrode by forming a silicon layer having a highly granulated surface and which comprises depositing an alloy layer comprising an A-material 2X and a B-material 2Y on a first insulating layer 1 which is deposited on a substrate. The depositing of the alloy layer takes place at a predetermined temperature to form a plurality of B-material 2Y precipitations on the insulating layer 1 and an A-material 2X layer on the plurality of B-material 2Y precipitations and on a plurality of first insulating layer surfaces not covered by the plurality of B-material 2Y precipitations. The resulting structure is then cooled, preferably to room temperature. The solubility of the B-material 2Y, which may be considered as the solute, is extremely limited in the A-material 2X, which may be considered as the solvent. The A-material 2X is selectively removed from the plurality of first insulating layer surfaces and from the plurality of B-material 2Y precipitations deposited on the insulating layer 1 to expose the plurality of first insulating layer surfaces and the plurality of B-material 2Y precipitations deposited on the first insulating layer to define a highly granulated surface. A silicon layer 3 for charge storage electrode is deposited on the resulting surface comprising the highly granulated surface thereby forming a highly granulated silicon surface to provide, in use, a conducting layer for charge storage electrode whereby the capacitance of the capacitor for a semiconductor device is increased per unit area.

REFERENCES:
patent: 5149676 (1992-09-01), Kim et al.
patent: 5204280 (1993-04-01), Dhong et al.
patent: 5254503 (1993-10-01), Kenney

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