Method for manufacturing a semiconductor wafer using a threadles

Details Method for manufacturing a semiconductor wafer using a threadles Method for manufacturing a semiconductor wafer using a threadles

1998-07-10

2000-10-24

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438742, 156345, H01L 21302

Patent

active

061367184

ABSTRACT:
A method for manufacturing a semiconductor wafer begins by placing the wafer into a process chamber (74). A metal etch gas is then provided through a gas fitting (52) having an outlet tube (52b). The outlet tube (52b) is threadless and is made of a material which will not substantially corrode in the presence of the corrosive etch gas. In addition, the outlet tube (52b) contains gas distribution openings (84) which improve gas distribution within a gas channel (54b) of a gas ring (54). The elimination of the threading in the gas feed inlet (54a) of the gas ring (54) will allow a sidewall of the inlet (54a) to be anodized for greater corrosion protection. The reduction in corrosion will improve wafer yield, reduce manufacturing costs, and reduce equipment down time.

REFERENCES:
patent: 4243254 (1981-01-01), Hill et al.
patent: 4541659 (1985-09-01), Nakamura
patent: 5423942 (1995-06-01), Robbins et al.
patent: 5716877 (1998-02-01), Yavelberg
patent: 5746875 (1998-05-01), Maydan et al.
patent: 5792672 (1998-08-01), Chan et al.

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