Method for manufacturing a semiconductor structure having reduce

Details Method for manufacturing a semiconductor structure having reduce Method for manufacturing a semiconductor structure having reduce

1981-02-17

1983-02-15

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 357 49, 357 52, 357 91, H07L 21263, H01L 2704

Patent

active

043732526

ABSTRACT:
The lateral spacing between buried regions separated by oxide-isolation regions in a semiconductor structure is reduced to as little as one micron by performing a deep implantation of ions of the conductivity type opposite to that of the buried regions generally into portions of the substrate below the sites where the oxide-isolation regions are formed.

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