Method for manufacturing a semiconductor structure

Details Method for manufacturing a semiconductor structure Method for manufacturing a semiconductor structure

1978-12-18

1981-03-10

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, H01L 21208

Patent

active

042552060

ABSTRACT:
A method for manufacturing a semiconductor structure, especially for optoelectronic components, in which, at least one layer of a further semiconductor compound is deposited epitaxially on a substrate of a semiconductor compound. The surface of the substrate is provided with a multiplicity of bevelled structures of the further semiconductor compound. Prior to deposition, the surface of the substrate is provided with a multiplicity of mesas in a predetermined distribution, from each of which a bevelled structure is then generated. The plane and fault-free crystal surface of the bevels is preserved when further layers are deposited. The method is especially well suited for the manufacture of optoelectronic and microwave components.

REFERENCES:
patent: 3824493 (1974-07-01), Hakki
patent: 3993963 (1976-11-01), Logan et al.
patent: 4033796 (1977-07-01), Burnham et al.
patent: 4077817 (1978-03-01), Bellavance

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