Method for manufacturing a semiconductor pressure sensor with si

Details Method for manufacturing a semiconductor pressure sensor with si Method for manufacturing a semiconductor pressure sensor with si

1995-06-05

1997-09-30

Trinh, Michael

Fishing, trapping, and vermin destroying

437901, 437921, 437 60, 437 24, 148DIG136, H01L 2177

Patent

active

056725515

ABSTRACT:
A semiconductor pressure sensor utilizes single-crystal silicon piezoresistive gage elements dielectrically isolated by silicon oxide from other such elements, and utilizes an etched silicon substrate with an etch stop. P-type implants form p-type piezoresistive gage elements and form p+ interconnections to connect the sensor to external electrical devices. The diaphragm is made from epitaxially-grown single-crystal silicon. Passivation nitride can be used for additional dielectric isolation. One practice of the invention provides over-range cavity protection, and thus increased robustness, by forming an over-range stop for the diaphragm through localized oxygen ion implantation and etching.

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European Search Report for 95103971.8, issued May 2, 1996.

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