Method for manufacturing a semiconductor memory device having a

Details Method for manufacturing a semiconductor memory device having a Method for manufacturing a semiconductor memory device having a

1997-04-30

1999-09-28

Bowers, Charles

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H01L 2100

Patent

active

059602520

ABSTRACT:
A method for manufacturing a nonvolatile semiconductor memory device comprises the steps of forming a ferroelectric capacitor, sputtering a first dielectric film on the ferroelectric capacitor, and depositing a second dielectric film on the first dielectric film by a CVD process using tetraethylorthosilicate as a source gas and ozone as an oxidizing agent at a temperature between 350 and 500.degree. C. The first dielectric film prevents hydrogen and water from being introduced into the ferroelectric film of the ferroelectric capacitor during and after the CVD process, thereby improving polarization, leakage current and dielectric breakdown characteristics of the ferroelectric capacitor.

REFERENCES:
patent: 5119154 (1992-06-01), Gnadinger
patent: 5496410 (1996-03-01), Fukuda et al.
patent: 5506748 (1996-04-01), Hoshiba
patent: 5688720 (1997-11-01), Hayashi
Nishimoto et al, Low Temperature Chemical Vapor Deposition of Dielectric Films Using Ozone and Organosaline, 19.sup.th Conference on Solid State Devices and Materials, Tokyo, 1987, pp. 447-550.
Nguyen et al, Reaction Mechanisms of Plasma-and Thermal-Assisted Chemical Vapor Deposition of Tetraethylothosilicate Oxide Films, J. Electrochem. Soc., vol. 137, No. 7, Jul. 1990, pp. 2209-2215.

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