Method for manufacturing a semiconductor memory device

Details Method for manufacturing a semiconductor memory device Method for manufacturing a semiconductor memory device

1994-12-28

1996-04-09

Fourson, George

Fishing, trapping, and vermin destroying

437 52, H01L 218247

Patent

active

055061591

ABSTRACT:
A method for manufacturing semiconductor memory device is capable of forming a first diffused layer in a memory cell portion and a second diffused layer in a peripheral portion in respective optimum conditions independently of each other without increasing the masking costs. The method includes steps of forming a polysilicon film covering the entire main surface of the substrate, patterning the polysilicon film in the memory cell portion without patterning the polysilicon film in the peripheral portion, performing a first ion implantation on the main surface to form the first diffused layer in the memory cell portion, while keeping the peripheral portion covered with the second polysilicon film, patterning the second polysilicon film in the peripheral portion to form a gate electrode, and performing a second ion implantation to form the second diffused layer in the peripheral portion. The first ion implantation is performed with the second polysilicon film being grounded for avoiding build-up of electrostatic charges.

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patent: 5036018 (1991-07-01), Mazzali
patent: 5094967 (1992-05-01), Shinada et al.
patent: 5132239 (1992-07-01), Ghezzi et al.
patent: 5153144 (1992-10-01), Komori et al.
patent: 5158902 (1992-10-01), Hanada
patent: 5292681 (1994-03-01), Lee et al.

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