Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-09-02
1985-04-23
Saba, William G.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29580, 148 15, 148175, 148187, 148188, 357 20, 357 34, 357 50, 357 59, H01L 21225, H01L 2176
Patent
active
045120749
ABSTRACT:
A method for manufacturing a semiconductor device, comprising the steps of selectively oxidizing a surface of a semiconductor layer of a first conductivity type so as to form a field oxide film, selectively forming an impurity region of a second conductivity type in an element region isolated by the field oxide film, forming a polycrystalline silicon pattern containing an impurity of the first conductivity type on a surface including at least part of the impurity region and the field oxide film, and diffusing the impurity of the first conductivity type from the polycrystalline silicon pattern into the impurity region so as to form another impurity region of the first conductivity type contiguous with the field oxide film, wherein a thickness t of the field oxide film and a concentration n of the impurity of the first conductivity type in the polycrystalline silicon pattern have the following relation:
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Saba William G.
Tokyo Shibaura Denki Kabushiki Kaisha
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