Method for manufacturing a semiconductor device utilizing dopant

Details Method for manufacturing a semiconductor device utilizing dopant Method for manufacturing a semiconductor device utilizing dopant

1978-10-24

1981-07-21

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 29590, 148174, 148187, 148190, 148191, 357 34, 357 59, 357 65, 427 85, 427 86, H01L 21225, H01L 2120

Patent

active

042796717

ABSTRACT:
A method for manufacturing a npn-type transistor includes steps of depositing phosphorus on a base region, covering the deposited phosphorus with a polycrystalline silicon layer and heating the deposited phosphorus to diffuse it into the base region to form an emitter region.

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Chang et al., "Fabrication of Junction Insulating Gate FET," I.B.M. Tech. Discl. Bull., vol. 13, No. 9, Feb. 1971, p. 2503.

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