Method for manufacturing a semiconductor device utilizing a self

Fishing – trapping – and vermin destroying

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437186, 437233, 437940, 437968, 437 41, H01L 2128, H01L 21336

Patent

active

050666045

ABSTRACT:
A method for manufacturing a semiconductor device utilizing a self-aligned contact process is disclosed. The method for manufacturing the same provides a conducting layer which is selectively connected in self-aligned contact, through contact holes, to predetermined electrodes of a plurality of electrodes in a semiconductor device, and provides a thermal oxide layer having a sufficient thickness to insulate the conducting layer from the other electrodes. So that a selective connection between the conducting layer and the predetermined electrode which are to be connected to each other is successively achieved within a more decreased cell size, while maintaining a sufficient thickness of an insulating layer between the conducting layer and the other electrodes which must be insulated from each other.

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