Fishing – trapping – and vermin destroying
Patent
1992-11-04
1993-10-26
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437205, 437208, 437966, 437974, 156DIG88, H01L 2120, H01L 2122, H01L 21304, H01L 2152
Patent
active
052565629
ABSTRACT:
The invention relates to the formation of arrays of thin film transistors (TFT's) on silicon substrates and the dicing and tiling of such substrates for transfer to a common module body.
REFERENCES:
patent: 3658618 (1972-04-01), Gramann
patent: 4226649 (1980-10-01), Davey et al.
patent: 4255208 (1981-03-01), Deutscher et al.
patent: 4321747 (1982-03-01), Takemura et al.
patent: 4575854 (1986-03-01), Martin
patent: 4727047 (1988-02-01), Bozler et al.
patent: 4769680 (1988-09-01), Resor, III et al.
patent: 4774205 (1988-09-01), Choi
patent: 4837182 (1989-06-01), Bozler et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4855255 (1989-08-01), Goodhue
patent: 4863877 (1989-09-01), Fan et al.
patent: 4870475 (1989-09-01), Endo et al.
patent: 4871517 (1989-10-01), Falckenberg et al.
patent: 4883561 (1989-11-01), Gmitter et al.
patent: 4935792 (1990-06-01), Tanaka et al.
patent: 4961629 (1990-10-01), Kato
patent: 4979002 (1990-12-01), Pankove
patent: 5045895 (1991-09-01), Yoshida et al.
patent: 5073806 (1991-12-01), Idei
Milnes, E. G., "Semiconductor Heterojunction Topics: Introduction and Overview," Solid-State Electronics vol. 29, 2:99-121, (1986).
Akiyama, M. et al., "Growth of GaAs on Si and Its Application to FETs and LEDs," Nat. Res. Soc. Symp. Proc., 67:53-64 (1986).
Turner, G. et al, "High-Speed Photoconductive Detectors Fabricated in Heteroepitaxial GaAs Layers," Mat. Res. Soc. Symp. Proc., 67:181-188 (1986).
McDaniel, D. L. et al., "Vertical Cavity Surface-Emitting Semiconductor Laser with CW Injection Laser Pumping," IEEE Photon Technol. Lett., Mar. 23, 1990.
Weber, J. P. et al., "Effects of Layer Thickness Variations on Vertical Cavity Surface-Emitting DBR Semiconductor Lasers", IEEE Photon Tech. Ltr., Mar. 23, 1990.
"3-D Chip-On-Chip Stacking", Semiconductor International, Dec. 1991.
McClelland et al., "A Technique for Producing Epitaxial Films on Reusable Substrates", Appl. Phys. Lett. 37, 560, Sep. 15, 1980.
Yablonovitch et al., "Extreme Selectivity in the Lift-Off of Epitaxial GaAs Films", Appl. Phys. Lett. 51, 2222 Dec. 12, 1987.
Fan et al., "Lateral Epitaxy by Seeded Solidification for Growth of Crystal Si Films on Insulators", Appl. Phys. Lett., 38, 365, Mar. 3, 1981.
Allen et al., "Characterization of Isolated Silicon Epitaxy Material", SPIE vol. 945--Advanced Processing of Semiconductor Devices II (Mar. 17-Mar. 18, 1988).
Conference Record of the 1991 International Display Research Conference, Oct. 15-17, 1991, IEEE.
Y. Hayashi et al., "A New Three Dimensional IC Fabrication Technology, Stacking Thin Film Dual-CMOS Layers" 1991 IEEE IEDM, pp. 657-660.
Cheong Ngwe
Dingle Brenda D.
Dingle Jason E.
Vu Duy-Phach
Chaudhuri Olik
Graybill David E.
Kopin Corporation
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