Method for manufacturing a semiconductor device using a catalyst

Details Method for manufacturing a semiconductor device using a catalyst Method for manufacturing a semiconductor device using a catalyst

1994-11-16

1996-08-06

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437173, 437230, 437238, 437245, H01L 2120

Patent

active

055433529

ABSTRACT:
A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a relatively low temperature and then improving the crystallinity by irradiating the film with a laser light. The concentration of the catalyst in the crystallized silicon film can be controlled by controlling the concentration of the catalyst in the solution.

REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5358907 (1994-10-01), Wong
A. V. Dvurehenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Comminications, vol. 85, No. 11, pp. 921-924, 1993.

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