Method for manufacturing a semiconductor device using a catalyst

Details Method for manufacturing a semiconductor device using a catalyst Method for manufacturing a semiconductor device using a catalyst

1995-06-07

1997-03-18

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437173, 437174, 437245, 437230, 437233, 437238, H01L 2120

Patent

active

056122500

ABSTRACT:
A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a relatively low temperature and then improving the crystallinity by irradiating the film with a laser light. The concentration of the catalyst in the crystallized silicon film can be controlled by controlling the concentration of the catalyst in the solution.

REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" (3 pages).
A. V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.
"Crystallized Si Films By Low-Temperature Rapid Thermal Annealing Of Amorphous Silicon", R. Kakkad, J. Smith, W. S. Lau, S. J. Fonash, J. Appl. Phys. 65 (5), Mar. 1, 1989, 1989 American Institute of Physics, pp. 2069-2072.
"Polycrystalline Silicon Thin Film Transistors on Corning 7059 Glass Substrates Using Short Time, Low Temperature Processing", G. Liu, S. J. Fonash, Appl. Phys. Lett. 62 (20), May 17, 1993, 1993 American Institute of Physics, pp. 2554-2556.
"Selective Area Crystallization of Amorphous Silicon Films by Low-Temperature Rapid Thermal Annealing", Gang Liu and S. J. Fonash, Appl. Phys. Lett. 55 (7), Aug. 14, 1989, 1989 American Institute of Physics, pp. 660-662.
"Low Temperature Selective Crystallization of Amorphous Silicon", R. Kakkad, G. Liu, S. J. Fonash, Journal of Non-Crystalline Solids, vol. 115, (1989), pp. 66-68.

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