Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-11-09
1983-09-20
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29580, H01L 21316
Patent
active
044047363
ABSTRACT:
A method for manufacturing a semiconductor device of mesa type comprises forming mesa recesses of predetermined depth around an element in the surface of a semiconductor body, forming on the back of semiconductor body a film for lessening the concentration of stress, filling glass powder into mesa recesses, and sintering glass powder to form glass insulators. According to the method of the present invention, cracks can be prevented from being caused in the semiconductor body and glass insulators formed in mesa recesses.
REFERENCES:
patent: 4335501 (1982-06-01), Wickenden et al.
Bean, K. E. et al., "Some Properties of Vapor Deposited SiC", in J. Electrochem. Soc.: Solid State Science, 114(11), 11/67, pp. 1158-1161.
Aboaf, J. A., "Some Properties of Vapor Deposited Silicon Nitride Films . . . ", in J. Electrochem. Soc.: Solid State Science, 116(12), 12/69, pp. 1736-1740.
Blachman, A. G., "Use of Bias-Sputtered Film to Stress Bulk Material or Another Film", in IBM-TDB, 15(9), 2/73, pp. 2701-2702.
Abe Masahiro
Ajima Takashi
Koshino Yutaka
Ohshima Jiro
Rutledge L. Dewayne
Schiavelli Alan E.
Tokyo Shibaura Denki Kabushiki Kaisha
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