Method for manufacturing a semiconductor device including a...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S725000, C438S727000, C438S730000, C438S905000

Reexamination Certificate

active

07928014

ABSTRACT:
A method for manufacturing a semiconductor device includes: mounting a wafer having an exposed silicon nitride film, on an electrode received in a plasma chamber; dry-cleaning the chamber to remove reaction products accumulated on the wall and ceiling of the chamber, anisotropic-etching the silicon nitride film and an underlying silicon film for patterning; and removing the wafer from the chamber. The method repeats the treatment for a number of semiconductor wafers.

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