Method for manufacturing a semiconductor device having vertical

Details Method for manufacturing a semiconductor device having vertical Method for manufacturing a semiconductor device having vertical

1985-01-09

1986-03-25

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148187, 29578, H01L 21425

Patent

active

045773971

ABSTRACT:
The present invention provides a semiconductor device which includes a thick countersunk oxide layer selectively formed by the LOCOS process on the surface of a silicon body, openings formed in this oxide layer, and semiconductor element regions formed by the introduction of an impurity in the silicon body through these openings.
The semiconductor element regions preferably comprise the emitter region and the collector region of the lateral transistor.

REFERENCES:
patent: 3971059 (1976-07-01), Dunkley et al.
patent: 4144098 (1979-03-01), Roesner
patent: 4157268 (1979-06-01), Bergeron et al.
patent: 4191595 (1980-03-01), Aomura et al.
patent: 4325180 (1982-04-01), Curran
patent: 4472871 (1984-09-01), Green et al.

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