Method for manufacturing a semiconductor device having doped...

Details Method for manufacturing a semiconductor device having doped... Method for manufacturing a semiconductor device having doped...

2007-01-22

2010-11-30

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S430000, C257SE21197

Reexamination Certificate

active

07842579

ABSTRACT:
Various illustrative embodiments of methods for manufacturing a semiconductor device are described. These methods may include, for example, forming a first polysilicon layer above a substrate, wherein the first polysilicon layer comprises a doped portion, and forming a second polysilicon layer over a surface of the first polysilicon layer. Also, various illustrative embodiments of semiconductor devices are described that may be manufactured such as by the various methods described herein.

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