Method for manufacturing a semiconductor device having an...

Details Method for manufacturing a semiconductor device having an... Method for manufacturing a semiconductor device having an...

2005-02-28

2008-10-14

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S299000, C438S364000, C438S369000

Reexamination Certificate

active

07435659

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device having an alignment feature. The method for manufacturing the semiconductor device, among other steps, may include implanting an n-type dopant into a substrate thereby forming an implanted region and an unimplanted region in the substrate. The method may further include oxidizing the substrate using a wet oxidation process, the wet oxidation process and n-type dopant causing a ratio of oxidation of the implanted region to the unimplanted region to be 2:1 or greater, and then removing the oxidized portions of the substrate thereby leaving an alignment feature proximate the implanted region.

REFERENCES:
patent: 4573257 (1986-03-01), Hulseweh
patent: 5252510 (1993-10-01), Lee et al.
patent: 5397734 (1995-03-01), Iguchi et al.
patent: 6331456 (2001-12-01), Wu
patent: 6348371 (2002-02-01), Huang et al.
patent: 6803668 (2004-10-01), Holloway et al.
patent: 7332405 (2008-02-01), Yabe et al.

Affiliated with

Also associated with

Rating

Method for manufacturing a semiconductor device having an... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor device having an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device having an... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4002154