Semiconductor device manufacturing: process – Making device array and selectively interconnecting
Reexamination Certificate
2008-06-10
2008-06-10
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
C438S585000
Reexamination Certificate
active
07384823
ABSTRACT:
Disclosed is a method for forming a storage node contact of a semiconductor device. In such a method, there is provided a substrate formed with gates and source/drain regions. A landing plug poly is formed between the gates, and an insulating interlayer is formed over the entire surface of the substrate including the landing plug poly and the gates. The insulating interlayer is then etched to form a storage node contact hole exposing the landing plug poly. Thereafter, the landing plug poly exposed through the storage node contact hole is removed. Finally, a polysilicon film is filled up within a vacant portion from which the landing plug poly is removed and the storage node contact hole above the vacant portion.
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Ahn Hyun
Lee Ju Hee
Esquerra Andres Lopez
Hynix / Semiconductor Inc.
Townsend and Townsend / and Crew LLP
Vu David
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