Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-05-13
2008-05-13
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257SE21218
Reexamination Certificate
active
11099609
ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of consecutively depositing a Poly-Si layer, a WN layer and a W layer on a SiO2layer, forming a mask pattern on the W layer, selectively etching the W layer by using plasma in a first etching gas having a high etch selectivity ratio between W and WN, selectively etching the WN layer and the Poly-Si layer by using plasma in a second etching gas having a high etch selectivity between WN and Si, and selectively etching the Poly-Si layer13by using plasma in a third etching gas having a high etch selectivity between Si and silicon oxide.
REFERENCES:
patent: 5753533 (1998-05-01), Saito
patent: 6068783 (2000-05-01), Szetsen
patent: 6440870 (2002-08-01), Nallan et al.
patent: 6613682 (2003-09-01), Jain et al.
patent: 6716760 (2004-04-01), Bae et al.
patent: 7048837 (2006-05-01), Somekh et al.
patent: 2003/0092280 (2003-05-01), Lee et al.
patent: 2-2618 (1990-01-01), None
patent: 2-302034 (1990-12-01), None
patent: 6-244150 (1994-09-01), None
patent: 7-147271 (1995-06-01), None
patent: 10-247641 (1998-09-01), None
patent: 2000-040696 (2000-02-01), None
patent: 2003-17475 (2003-01-01), None
patent: 2003-068878 (2003-03-01), None
patent: 2003-078034 (2003-03-01), None
Chinese Office Action dated Feb. 1, 2008, with English language translation.
Baumeister B. William
Elpida Memory Inc.
McGinn IP Law Group PLLC
Wilson Bryan E
LandOfFree
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