Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2008-05-13
2008-05-13
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257SE21218
Reexamination Certificate
active
07371692
ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of consecutively depositing a Poly-Si layer, a WN layer and a W layer on a SiO2layer, forming a mask pattern on the W layer, selectively etching the W layer by using plasma in a first etching gas having a high etch selectivity ratio between W and WN, selectively etching the WN layer and the Poly-Si layer by using plasma in a second etching gas having a high etch selectivity between WN and Si, and selectively etching the Poly-Si layer13by using plasma in a third etching gas having a high etch selectivity between Si and silicon oxide.
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Chinese Office Action dated Feb. 1, 2008, with English language translation.
Baumeister B. William
Elpida Memory Inc.
McGinn IP Law Group PLLC
Wilson Bryan E
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