Method for manufacturing a semiconductor device free from curren

Details Method for manufacturing a semiconductor device free from curren Method for manufacturing a semiconductor device free from curren

1987-09-04

1988-11-22

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136290, 136244, 437 4, 437170, 437171, 437923, 437939, H01L 3118

Patent

active

047866071

ABSTRACT:
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processsing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes.

Affiliated with

Also associated with

Rating

Method for manufacturing a semiconductor device free from curren does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor device free from curren, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device free from curren will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-435259