Method for manufacturing a semiconductor device containing a cry

Details Method for manufacturing a semiconductor device containing a cry Method for manufacturing a semiconductor device containing a cry

1994-11-29

1996-12-17

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437230, 437233, 437245, 437 88, 437164, 148DIG16, H01L 21225

Patent

active

055852912

ABSTRACT:
A method for manufacturing a semiconductor device having a crystalline silicon semiconductor layer comprises the steps of heat crystallizing an amorphous silicon semiconductor layer at a relatively low temperature because of the use of a crystallization promoting material such as Ni, Pd, Pt, Cu, Ag, Au, In, Sn, Pb, P, As, and Sb. The crystallization promoting material is introduced by mixing it within a liquid precursor material for forming silicon oxide and coating the precursor material onto the amorphous silicon film. Thus, it is possible to add the crystallization promoting material into the amorphous silicon film at a minimum density.

REFERENCES:
patent: 3108914 (1963-10-01), Hoerni
patent: 3389024 (1968-06-01), Schimmer
patent: 3783049 (1974-01-01), Sandera
patent: 3873384 (1975-03-01), Chang
patent: 3886569 (1975-05-01), Basi et al.
patent: 3988762 (1976-10-01), Cline et al.
patent: 4090915 (1978-05-01), Keller
patent: 4091527 (1978-05-01), Goodman et al.
patent: 4110488 (1978-08-01), Risko
patent: 4619719 (1986-10-01), Thomas et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5403772 (1995-04-01), Zhang et al.
R. Anton, Thin Solid Films, 118 (1984) 293 "Interaction of Au, Pt and Au-Pt with Oxidized Si . . . ".
S. Wolf & R. N. Tauber, "Silicon Processing for the VLSI Era" vol. I, 1986 pp. 516-517.
M. Meuris et al., Jpn. J. Appl. Phys., 31 (11A) (1992) L1514 ". . . Gate oxide integrity in NH.sub.4 OH/H.sub.2 O.sub.2 Mixtures".
J. Stoemnos et al., Appl. Phys. Lett., 58(11) (1991) 1196 "Crystallization of a-Si . . . Utilizing Au".
Y. Kawazu et al., Jpn. J. Appl. Phys. 29(12) (1990) 2698 ". . . Crystallization of a-Si:H induced By Nickel Silicide".
J. T. Mayer et al., Surface Science, 265 (1992) 102 ". . . Diffusion of Adsorbed Ni on ultrathin . . . SiO.sub.2 ".
M. Morita et al., Appl. Phys. Lett., 49(12) (1986) 699 ". . . F enhanced photo-oxidation of Silicon . . . ".
M. Morita et al., Jpn. J. Appl. Phys., 29(12) (1990) 2392 "Native Oxide Growth . . . in Hydrogen Peroxide".
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon" Appl. Phys. Lett. 60(2) (1992) 225.
A. V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Phys. Stat. Sol. A 95 (1986) 635.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.
"Crystallized Si Films By Low-Temperature Rapid Thermal Annealing Of Amorphous Silicon", R. Kakkad, J. Smith, W. S. Lau, S. J. Fonash, J. Appl. Phys. 65 (5), Mar. 1, 1989, 1989 American Institute of Physics, pp. 2069-2072.
"Polycrystalline Silicon Thin Film Transistors on Corning 7059 Glass Substrates Using Short Time, Low Temperature Processing", G. Liu, S. J. Fonash, Appl. Phys. Lett. 62 (20), May 17, 1993, 1993 American Institute of Physics, pp. 2554-2556.
"Selective Area Crystallization of Amorphous Silicon Films by Low-Temperature Rapid Thermal Annealing", Gang Liu and S. J. Fonash, Appl. Phys. Lett. 55 (7), Aug. 14, 1989, 1989 American Institute of Physics, pp. 660-662.
"Low Temperature Selective Crystallization of Amorphous Silicon", R. Kakkad, G. Liu, S. J. Fonash, Journal of Non-Crystalline Solids, vol. 115 (1989), pp. 66-68.

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