Method for manufacturing a semiconductor device and suppressing

Details Method for manufacturing a semiconductor device and suppressing Method for manufacturing a semiconductor device and suppressing

1989-02-06

1990-06-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437 26, 437 29, 437 47, H01L 21265

Patent

active

049314050

ABSTRACT:
A method for manufacturing a semiconductor device is disclosed which selectively forms in a one-conductivity type semiconductor device a deep impurity-diffused area at over 1100.degree. C. in an H.sub.2 gas atmosphere containing N.sub.2, Ar, Ne, He and a combination thereof.

REFERENCES:
patent: 4762802 (1988-08-01), Parrillo
Journal of the Electrochemical Society, vol. 134, No. 4, Apr. 1987, pp. 1018-1025, L. Jastrzebski et al.
IEEE Electron Device Letters, vol. EDL-6, No. 12, Dec. 1985, pp. 659-661, S. S. Wong.
Extended Abstracts, vol. 86-1, No. 1, May, 1986, Abstract No. 197, pp. 283-284.

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