Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-09-05
2009-11-03
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE21495, C257SE21141, C438S653000
Reexamination Certificate
active
07612452
ABSTRACT:
A method for manufacturing a semiconductor device includes: the first step of forming, in an insulating film provided on a substrate, a recess that is porositized at least at inner walls; the second step of forming an alloy layer made of copper and a metal other than copper so as to cover the inner walls of the recess; the third step of burying a conductive layer made primarily of copper in the recess provided with the alloy layer; the fourth step of subjecting the thus treated substrate to thermal treatment to cause the metal in the alloy layer to react with a constituent component of the insulating film to form a barrier film made of a metal compound having Cu diffusion barrier properties.
REFERENCES:
patent: 7507666 (2009-03-01), Nakao et al.
patent: 2005/0218519 (2005-10-01), Koike et al.
patent: 2007/0059919 (2007-03-01), Ooka
patent: 2004-063859 (2004-02-01), None
patent: 2005-340601 (2005-12-01), None
patent: 2007-012996 (2007-01-01), None
Japanese Office Action issued on Nov. 25, 2008, corresponding to Japanese Patent Application No. 2006-241039.
T. Usui et al.; Low Resistive and Highly Reliable Cu Dual-Damascene Interconnect Technology Using Self-Formed MnSixOy Barrier Layer; IEEE International Interconnect Technology Conference in 2005; pp. 188-190.
Hayashi Toshihiko
Ohba Yoshiyuki
Dang Trung
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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