Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1982-09-16

1985-01-01

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Magnetic materials

357 50, 29576W, 29578, 29580, H01L 2176

Patent

active

044914865

ABSTRACT:
A method is proposed for manufacturing a semiconductor device, which comprises forming groove(s) having a vertical wall in a semiconductor substrate; doping the same type of impurity as that of the substrate at a dose of not less than 1.times.10.sup.14 cm.sup.-2 or the opposite type of impurity to that of the substrate in said groove(s) to form an impurity region; filling the groove(s) with an insulating material to form a field region. A semiconductor device having an impurity region of the same conductivity type as that of the semiconductor substrate under a buried field region and of a sheet resistance .rho.s=50 ohms/.quadrature. is also proposed.

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