Semiconductor device manufacturing: process – Semiconductor substrate dicing – With attachment to temporary support or carrier
Reexamination Certificate
2011-07-26
2011-07-26
Landau, Matthew C. (Department: 2813)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
With attachment to temporary support or carrier
C438S108000, C438S123000, C257S668000
Reexamination Certificate
active
07985663
ABSTRACT:
A resin layer made of thermoplastic resin is formed on a supporting substrate, and then, an insulating layer is formed on the first resin layer. Then, an interlayer connector is formed through the insulating layer and then, a wiring layer is formed on the first resin layer so as to be electrically connected with the interlayer connector. Thereafter, a first semiconductor chip is mounted on the wiring layer. Then, the first resin layer is heated so that the supporting substrate and the insulating layer are relatively shifted one another to shear the first resin layer, thereby separating the supporting substrate and the insulating layer and forming a semiconductor device.
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Homma Soichi
Sato Takao
Shima Masaya
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Landau Matthew C.
Mitchell James M
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