Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1975-09-02

1977-12-13

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 29591, 357 15, 427 84, B01J 1700

Patent

active

040621030

ABSTRACT:
A method comprises forming a Schottky barrier forming a metal layer on one surface of a gallium arsenide substrate using niobium, tantalum and/or vanadium to provide a Schottky barrier, and subjecting the Schottky barrier to heat treatment at 350.degree. to 800.degree. C so as to render it thermally stable.

REFERENCES:
patent: 3886580 (1975-05-01), Calviello
patent: 3906540 (1975-09-01), Hollins

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