Fishing – trapping – and vermin destroying
Patent
1993-02-09
1994-06-21
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 28, 437247, 148DIG24, H01L 21265
Patent
active
053228103
ABSTRACT:
A method for manufacturing a semiconductor device providing steps of implanting impurity ions on the whole surface of a semiconductor substrate having a plurality of gate portions, in which side walls are formed on gate electrodes, by using the gate portion as masks, and then laminating a first insulating film, carrying out a first heat treatment to diffuse the impurities implanted in the substrate and to form an impurity diffusion layer between the gate portions, removing the first insulating film in a contact formation region which substantially includes the impurity diffusion layer, carrying out a second heat treatment to reduce crystal defects on the impurity diffusion layer and to laminate a second insulating film, which is made of the same material as that of the first insulating film, on the whole surface of the semiconductor substrate including the contact formation region again, and laminating a third insulating film on the whole surface and then carrying out a third heat treatment to flatten the surface.
REFERENCES:
patent: 4605447 (1986-08-01), Brotherton et al.
patent: 4786609 (1988-11-01), Chen
patent: 5015593 (1991-05-01), Yawata et al.
patent: 5094963 (1992-03-01), Hiraguchi et al.
patent: 5183770 (1993-02-01), Ayukawa et al.
Ayukawa Akitsu
Ishihara Hiroshi
Onishi Shigeo
Hearn Brian E.
Nguyen Tuan
Sharp Kabushiki Kaisha
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