Method for manufacturing a semiconductor device

Metal working – Method of mechanical manufacture – Assembling or joining

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148175, 148DIG26, 148DIG27, 156612, 156613, 156614, 427 85, 427 86, H01L 21205, H01L 2176

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046371273

ABSTRACT:
A method of epitaxying layers on a semiconductor substrate through apertures in an insulating layer formed on a substrate. The layers are grown from the substrate and extend on the insulating layer by reacting dichlorosilane, hydrogen chloride and a carrier gas flow in a chamber under reduced pressure. The layers are used for semiconductors device formation.

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