Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1980-09-08

1983-09-27

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 357 51, 357 59, H01L 2904, H01L 2702

Patent

active

044060513

ABSTRACT:
A method for manufacturing a semiconductor device includes a step, after forming a polycrystalline silicon layer, of doping oxygen and/or nitrogen by ion implantation in a predetermined portion of the polycrystalline silicon layer and converting the predetermined portion into a resistive element. The polycrystalline silicon layer is formed to cover a contact hole which exposes a predetermined portion of a conductive region, that is, a doped or semiconductor region or a wiring layer formed in contact with a semiconductor body. Within this contact hole and within the region of the polycrystalline silicon layer which is in contact with the doped region or the wiring layer, the polycrystalline silicon layer is converted into the resistive element by ion implantation.

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