Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1993-06-09

1998-02-10

Niebling, John

Fishing, trapping, and vermin destroying

437 41, 65 608, H01L 2184

Patent

active

057168571

ABSTRACT:
A semiconductor device is manufactured by the use of a glass substrate which has previously been heated. An amorphous semiconductor layer is formed on the previously heated glass substrate and then crystallized by heat. By virtue of the previous heating, shrink of the glass substrate after the crystallization process is reduced. Accordingly, internal stress is not generated in the crystallized semiconductor layer. The semiconductor device thus manufactured is superior in electrical property.

REFERENCES:
patent: 4214919 (1980-07-01), Young
patent: 4565584 (1986-01-01), Tamura et al.
patent: 4575925 (1986-03-01), Kanbara et al.
patent: 4592799 (1986-06-01), Hayafuji
patent: 4727044 (1988-02-01), Yamazaki
patent: 4851363 (1989-07-01), Troxell et al.
patent: 5108843 (1992-04-01), Ohtaka et al.
patent: 5254208 (1993-10-01), Zhang
patent: 5294238 (1994-03-01), Fukada et al.
patent: 5529937 (1996-06-01), Zhang et al.
Extended Abstracts of the 20th. Int. Conf. on Solid State Dev. and Materials, (24 Aug. 1988), Tokyo, pp. 619-620; K. Nakazawa et al.: "Low temperature Thin Film Transistor fabricationusing a polycrystalline Silicon film formed from a fluorinated Silicon Film".
IEEE Electron Device Letters, vol. 11, No. 6, (Jun. 1990), New York, U.S., pp. 258-260; Hiroshi Kanoh et al.: "Amorphous-Silicon/Silicon-Nitride Thin-Film Transistors fabricated by plasma-free (Chemical Vapor Deposition) method".
Suyama et al., "Electrical conduction mechanism and breakdown property in sputter-deposited silicon dioxide films on polycrystalline silicon", J. Appl. Physics, vol. 65, No. 1, pp.210-214, Jan. 1989.
Lemmons et al., "Laser Crystallization of Si Films on Glass", Applied Physics Letters, vol. 40 #6, pp. 469-471, Mar. 15, 1992.
Wolf et al. "Silicon Processing for the VLSI Era", vol. I, pp. 175-177, 1986.

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