Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1978-11-14
1980-03-04
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
148175, 148187, 357 34, H01L 2122
Patent
active
041909496
ABSTRACT:
Disclosed is a method for manufacturing a semiconductor device which comprises the steps of forming a first insulating film on a semiconductor substrate of one conductivity type which forms a collector region, boring an opening through the first insulating film to expose part of the substrate, forming a semiconductor layer on the exposed surface of the substrate and the first insulating film, forming a base-collector junction by introducing an impurity of the other conductivity type into the semiconductor layer, selectively removing the semiconductor layer to leave a semiconductor region consecutively connected to the exposed surface on the first insulating film, covering the semiconductor region with a second insulating film, and boring an opening through the second insulating film and introducing through the opening an impurity of the one conductivity type into the semiconductor region, whereby an emitter region is formed.
In the aforementioned method, there is further provided a step for laminating the first insulating film with an insulating layer or a polycrystalline semiconductor layer containing an impurity of the otherconductivity type directly after the step for forming the first insulating film.
REFERENCES:
patent: 3796613 (1974-03-01), Magdoo et al.
Davies et al., 1977 I.E.E.E. International Solid-State Circuits Conference, Feb. 18, 1977, pp. 218-220.
Sakai et al., "Bipolar Transistor of Novel Construction," 25th Lecture Meeting on Technology in Applied Physics, Japan, 1978.
Ikeda Masashi
Kihara Kazuo
Ozaki G.
Tokyo Shibaura Denki Kabushiki Kaisha
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