Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1997-02-21

1998-12-15

Font, Frank G.

Optics: measuring and testing

By polarized light examination

With light attenuation

356376, 356237, 356445, G01B 1130

Patent

active

058502882

ABSTRACT:
In a system for detecting a degree of unevenness of a surface of a semiconductor device, the surface is irradiated with light having a wavelength of approximately 240 nm to 500 nm. The degree of unevenness of the surface is determined in accordance with an intensity of reflected light from the surface.

REFERENCES:
patent: 5488476 (1996-01-01), Mansfield et al.
patent: 5563709 (1996-10-01), Poultney

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