Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1996-08-15

1998-12-29

Green, Anthony

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, 438695, 438697, 438699, 438753, 438756, H01L 21463, H01L 21302

Patent

active

058541330

ABSTRACT:
According to the present invention, to flatten the surface of a silicon substrate by polishing an element isolating buried insulation film by chemical mechanical polishing, a polysilicon film is formed on the top surface of a projection of a silicon substrate. After that, a buried insulation film is formed all over the silicon substrate along the irregularities thereof. A carbon film is formed on the surface of a recess of the buried insulation film. Using the carbon film as a stopper, the buried insulation film is polished by the chemical mechanical polishing to ease the irregularities of the surface of the polished insulation film. Then the carbon film is removed and, using the polysilicon film as a stopper, the buried insulation film is polished by the chemical mechanical polishing to flatten the surface of the polished insulation film. Thus, the flatness of the buried insulation film can easily be controlled, and the surface of the silicon substrate can always be flattened satisfactorily.

REFERENCES:
patent: 5314843 (1994-05-01), Yu et al.
patent: 5395801 (1995-03-01), Doan et al.
patent: 5491113 (1996-02-01), Murota
patent: 5502007 (1996-03-01), Murase
patent: 5512163 (1996-04-01), Warfield
patent: 5560802 (1996-10-01), Chisholm
patent: 5607718 (1997-03-01), Sasaki et al.
patent: 5629242 (1997-05-01), Nagashima et al.
patent: 5674783 (1997-10-01), Jang et al.
patent: 5674784 (1997-10-01), Jang et al.

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