Fishing – trapping – and vermin destroying
Patent
1990-01-18
1991-05-21
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437229, 437245, H01L 21465
Patent
active
050175130
ABSTRACT:
A method for manufacturing a semiconductor device comprises the steps of preparing a body having an insulating layer formed on a silicon substrate, an Al-Si-Cu alloy film formed on the insulating layer and an organic layer mask pattern formed on the alloy film, selectively etching a portion of the alloy film by a reactive ion etching with the mask pattern as a mask, and foreign film being left as a foreign material on a side wall of the alloy film at the step of the selective etching, the foreign material containing constituents of the treating layer and/or the underlying layer, heat-treating the body in an atmosphere containing at least oxygen and ashing the mask pattern while making the foreign film porous, the exposing, subsequent to the heat-treating step, the body to an etching step by an etching solution containing phosphoric acid and hydrofluoric acid.
REFERENCES:
patent: 3914138 (1975-10-01), Rai-Choudhury
patent: 4183781 (1980-01-01), Eldridge et al.
patent: 4544416 (1985-10-01), Meador et al.
patent: 4572759 (1986-02-01), Jacob
patent: 4680085 (1987-07-01), Vijan et al.
patent: 4744861 (1988-05-01), Matsunaga et al.
patent: 4867799 (1989-09-01), Grebinski
patent: 4889609 (1989-12-01), Cannella
Hearn Brian E.
Kabushiki Kaisha Toshiba
Wortman Deborah
LandOfFree
Method for manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-238147