Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2009-03-30

2011-11-22

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S113000, C438S124000, C438S127000, C438S455000, C438S456000, C438S457000, C438S458000, C438S462000, C438S464000, C438S459000, C257S723000, C257SE33056, C257SE23001, C257SE23041, C257SE21499

Reexamination Certificate

active

08062961

ABSTRACT:
Provided is a method for manufacturing a semiconductor device which includes: forming a removal layer over a base (support base); forming an interconnect layer over the removal layer; mounting semiconductor chip(s) over the interconnect layer; and separating the base from the interconnect layer while inducing the separation so as to originate from the removal layer, by irradiating a laser having a wavelength transparent with respect to the support base from the back side thereof, selectively to an unmounted region having no semiconductor chip(s) mounted thereon.

REFERENCES:
patent: 6770544 (2004-08-01), Sawada
patent: 2006/0068533 (2006-03-01), Utsunomiya
patent: 2007/0026662 (2007-02-01), Kawano et al.
patent: 2007/0257311 (2007-11-01), Kuwabara
patent: 2008/0224941 (2008-09-01), Sugiyama et al.
patent: 10-125929 (1998-05-01), None
patent: 2007-035825 (2007-02-01), None
patent: 2007035725 (2007-02-01), None
Kawano et al. (JP 2007-035825) machine translation.

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