Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2008-10-09

2010-10-26

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Having organic semiconductive component

C257SE29255

Reexamination Certificate

active

07820476

ABSTRACT:
A method for manufacturing a semiconductor device includes: forming a first region and a second region at a main surface of a semiconductor substrate; forming a gate insulating film containing Hf or Zr and oxygen on the first region and the second region; forming a first metallic film on the gate insulating film; forming a second metallic film on the first metallic film; removing a portion of the second metallic film; forming a third metallic film on the second metallic film and a portion of the first metallic film exposed by removing the portion of the second metallic film; and thermally treating so that constituent elements of the second metallic film is diffused into the gate insulating film via the first metallic film.

REFERENCES:
patent: 6376888 (2002-04-01), Tsunashima et al.
patent: 6784508 (2004-08-01), Tsunashima et al.
patent: 2002/0140036 (2002-10-01), Ma et al.
patent: 2003/0205767 (2003-11-01), Ma et al.
patent: 2005/0037580 (2005-02-01), Nakajima et al.
patent: 2002-329794 (2002-11-01), None

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