Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2006-03-29
2008-12-16
Garber, Charles D. (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S462000, C257SE21540
Reexamination Certificate
active
07465641
ABSTRACT:
Manufacturing a semiconductor device by removing the insulation film in an alignment mark-forming region, depositing a first semiconductor layer, removing the insulation film on the semiconductor substrate after the second semiconductor layer is formed, forming a first exposing region for exposing the semiconductor substrate through the second semiconductor layer and the first semiconductor layer with reference to the second semiconductor layer in the alignment mark-forming region as a first alignment mark for positioning, while forming, on the semiconductor substrate, a second alignment mark, forming a second exposing region for exposing the first semiconductor layer by using the second alignment mark as a reference for positioning, forming a cavity and forming a buried insulation layer in the cavity, and forming a first grate electrode by using the second alignment mark as a reference for positioning.
REFERENCES:
patent: 6815308 (2004-11-01), Holscher et al.
patent: 7005755 (2006-02-01), Yoshimura et al.
patent: 2000-124092 (2000-04-01), None
patent: 2002-299591 (2002-10-01), None
Sakai, et al., “Separation by Bonding Si Islands (SBSI) for LSI Applications,” Second International SiGe Technology and Device Meeting, Meeting Abstract, pp. 230-231 (2004).
Hara Toshiki
Kanemoto Kei
Chaclas George N.
Edwards Angell Palmer & & Dodge LLP
Garber Charles D.
Isaac Stanetta D
Penny, Jr. John J.
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