Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2006-02-28

2008-08-05

Prenty, Mark (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S396000

Reexamination Certificate

active

07407818

ABSTRACT:
A method for manufacturing a semiconductor device includes the steps of preparing a semiconductor substrate, forming a lower electrode having a laminated film of Ir and IrO2whose thickness is 100 nm or less over the semiconductor substrate, forming a capacity insulating film comprised of a metal oxide dielectric on the lower electrode, and forming an upper electrode comprised of a precious metal film on the capacity insulating film.

REFERENCES:
patent: 6143191 (2000-11-01), Baum et al.
patent: 6485988 (2002-11-01), Ma et al.
patent: 2002/0076936 (2002-06-01), Iguchi
patent: 2006/0073614 (2006-04-01), Hara
patent: 7/130712 (1995-05-01), None
patent: 11/111695 (1999-04-01), None
patent: 2002/110633 (2002-04-01), None

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