Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2007-11-20

2007-11-20

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S720000, C438S721000, C438S724000, C438S725000

Reexamination Certificate

active

10783940

ABSTRACT:
A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the anti-reflective layer using a first cleaning solution; cleaning the oxide residues on the anti-reflective layer using a second cleaning solution; forming a photoresist pattern on the anti-reflective layer; and patterning the conductive film using the photoresist pattern.

REFERENCES:
patent: 5637151 (1997-06-01), Schulz
patent: 5759746 (1998-06-01), Azuma et al.
patent: 6159860 (2000-12-01), Yang et al.
patent: 6383723 (2002-05-01), Iyer et al.
patent: 6686668 (2004-02-01), Nesbit et al.
patent: 6753247 (2004-06-01), Okoroanyanwu et al.

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