Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2007-07-24

2007-07-24

Potter, Roy (Department: 2822)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C438S622000

Reexamination Certificate

active

11211547

ABSTRACT:
As etch-stop films or Cu-diffusion barrier films used in insulation films constituting conductor layers of a stacked structure, films having smaller dielectric constant than silicon nitride films are used, and an insulation film at a lower-layer part of the stacked structure is made to have smaller dielectric constant than that at an upper-layer part thereof, and further this insulation film is a silicon oxide (SiO) film and has, in the interior thereof, nano-pores of from 0.05 nm or more to 4 nm or less in diameter as chief construction. This makes it possible to dramatically reduce effective dielectric constant while keeping the mechanical strength of the conductore layers themselves, and can materialize a highly reliable and high-performance semiconductor device having mitigated the wiring delay of signals which pass through wirings.

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