Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

2006-02-14

2006-02-14

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S049000, C257S057000, C257S050000, C257S070000, C257S072000, C257S068000, C257S069000, C257S347000, C257S628000, C438S040000, C438S187000, C438S198000

Reexamination Certificate

active

06998639

ABSTRACT:
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

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