Method for manufacturing a semiconductor device

Metal working – Method of mechanical manufacture – Assembling or joining

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29571, 29578, 148 15, 357 49, 357 55, H01L 2195, H01L 2176

Patent

active

045050252

ABSTRACT:
A method for manufacturing a semiconductor device is disclosed which comprises the step of forming one or more first grooves by selectively etching a field region of a semiconductor substrate, the step of forming, on the entire surface of the substrate including the first groove, a first insulating film having a thickness substantially equal to or greater than the depth of the first groove, this first insulating film having on its upper surface one or more second grooves corresponding to the first groove, at least one of the second grooves having a width greater than its depth, the step of selectively forming, in at least one of the second grooves having a width greater than its depth, a second insulating film having a thickness substantially equal to the depth of the second groove, the step of forming a third insulating film having a flat surface on its whole surface, the step of applying an anisotropic dry etching technique to the resultant structure to expose the surface of the substrate, thereby obtaining a substrate which has a flat surface and having the first insulating material buried in the field region, and the step of forming a semiconductor element in the surface region of the substrate isolated by the first insulating material buried in the field region of the substrate.

REFERENCES:
patent: 4333227 (1982-06-01), Horng et al.
patent: 4338138 (1982-07-01), Cavaliere et al.
patent: 4378630 (1983-04-01), Horng et al.
patent: 4393573 (1983-07-01), Kato et al.
patent: 4394237 (1983-07-01), Donnelly et al.
patent: 4404735 (1983-09-01), Sakurai
patent: 4419813 (1983-12-01), Iwai
J. Electrochem. Soc. 128, 423 (1981), A. C. Adams and C. D. Capio, Feb. 1981.
29th Lecture Meeting by Applied Physics Institute, Lecture No. 2p-S-6, by Ogawa et al., Mar. 1982.

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