Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-03-08
2005-03-08
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S655000, C438S682000, C438S723000
Reexamination Certificate
active
06864183
ABSTRACT:
Plasma etching is performed using a mixed gas of at least one or more fluorine-containing gases selected from the group consisting of a nitrogen trifluoride gas, a hydrogen fluoride gas, a dicarbon hexafluoride gas, a carbon tetrafluoride gas and a sulfur hexafluoride gas, and an argon gas to remove a native oxide film5being on a silicon substrate1and a gate electrode3, followed by forming a metal silicide film on the silicon substrate1and the gate electrode3.
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Burns Doane Swecker & Mathis L.L.P.
Nguyen Ha Tran
Renesas Technology Corp.
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