Method for manufacturing a semiconductor device

Details Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device

1984-10-12

1986-01-07

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29576W, 29578, 29580, H01L 2138, H01L 21467

Patent

active

045632278

ABSTRACT:
The invention provides a method for manufacturing a semiconductor device, wherein a semiconductor substrate is vertically etched to form a groove, antioxidant insulating films are formed on the side walls of the groove, and local oxidation is performed. Lateral extrusion of an oxide film which is a so-called bird's beak and a projection of the oxide film which is a so-called bird's head are substantially eliminated. As a result, the active region of the transistor, that is, the element formation region may not be narrowed, providing high packing density and high precision. Furthermore, the surface of the semiconductor substrate is flattened to prevent short-circuiting and disconnections of wiring layers. Stable manufacturing process provides a high yield of the semiconductor device. Electrical characteristics of the semiconductor device are greatly improved.

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patent: 4272308 (1981-06-01), Varshney
patent: 4313255 (1982-02-01), Shinozaki et al.
patent: 4373965 (1983-02-01), Smigelski
patent: 4394196 (1983-07-01), Iwai

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